Mapping In concentration, strain, and internal electric field in InGaN/GaN quantum well structure
Identifieur interne : 00A675 ( Main/Repository ); précédent : 00A674; suivant : 00A676Mapping In concentration, strain, and internal electric field in InGaN/GaN quantum well structure
Auteurs : RBID : Pascal:04-0132810Descripteurs français
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- 6865F, 7321F, 6837L, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Puits quantique semiconducteur, Point quantique semiconducteur, Effet champ électrique, Effet contrainte, Paramètre cristallin, Microscopie électronique balayage transmission, Holographie électron.
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Abstract
Quantitative comparisons have been made of the In concentration, strain, and internal electric field present in a pseudomorphic InGaN/GaN quantum well. Z-contrast scanning transmission electron microscopy was used for mapping In concentration with atomic resolution, variations of the c-lattice parameter of the InGaN layer were measured from (0001) lattice fringes in high-resolution transmission electron micrographs, and the internal electric fields were determined by differentiating phase images obtained by electron holography. Based on these measurements, it was concluded that local fluctuations of In concentration caused inhomogeneities in the internal electric field across the quantum well. The band structure of the quantum well would thus be altered not only by quantum dot effects but also by the additional modulation of the internal electric field, leading to further broadening of the light emission. © 2004 American Institute of Physics.
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Mccartney</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Center for Solid State Science, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Smith, David J" uniqKey="Smith D">David J. Smith</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Center for Solid State Science, Arizona State University, Tempe</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0132810</idno><date when="2004-03-22">2004-03-22</date><idno type="stanalyst">PASCAL 04-0132810 AIP</idno><idno type="RBID">Pascal:04-0132810</idno><idno type="wicri:Area/Main/Corpus">00BC98</idno><idno type="wicri:Area/Main/Repository">00A675</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electric field effects</term><term>Electron holography</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Lattice parameters</term><term>Scanning transmission electron microscopy</term><term>Semiconductor quantum dots</term><term>Semiconductor quantum wells</term><term>Stress effects</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865F</term><term>7321F</term><term>6837L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Point quantique semiconducteur</term><term>Effet champ électrique</term><term>Effet contrainte</term><term>Paramètre cristallin</term><term>Microscopie électronique balayage transmission</term><term>Holographie électron</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Quantitative comparisons have been made of the In concentration, strain, and internal electric field present in a pseudomorphic InGaN/GaN quantum well. Z-contrast scanning transmission electron microscopy was used for mapping In concentration with atomic resolution, variations of the c-lattice parameter of the InGaN layer were measured from (0001) lattice fringes in high-resolution transmission electron micrographs, and the internal electric fields were determined by differentiating phase images obtained by electron holography. Based on these measurements, it was concluded that local fluctuations of In concentration caused inhomogeneities in the internal electric field across the quantum well. 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R.)</s1></fA11><fA11 i1="03" i2="1"><s1>SMITH (David J.)</s1></fA11><fA14 i1="01"><s1>Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>2103-2105</s1></fA20><fA21><s1>2004-03-22</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0132810</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Quantitative comparisons have been made of the In concentration, strain, and internal electric field present in a pseudomorphic InGaN/GaN quantum well. 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